特征

*低启动电流（典型值 0.12mA）

*自动前馈补偿

*逐脉冲限流

*带迟滞的欠压锁定

*双脉冲抑制

*大电流图腾柱输出直接驱动MOSFET

*内部修整带隙参考

*500kHz 操作

Supply Voltage(Low Impedance Source) VCC 30 V

Supply Voltage(ICC<30mA) VCC Self Limiting V

Analog Inputs (Pin 2,3) VI(ANA) -0.3 ~ +6.3 V

Output Current (Peak ) IO(PEAK) ±1 A

Error Amplifier Output Sink Current ISINK(EA) 10 mA

Output Energy (Capacity Load) 5 μJ

Power Dissipation( TA≦25°C) DIP-8

PD

1250 mW SOP-8 800

Derated at TA>25°C 8 mW/°C

Junction Temperature TJ +150 °C

Storage Temperature TSTG -65 ~ +150 °C